Method for driving a pnpn semiconductor device

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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357 17, 307311, 350320, H01L 3300, H01L 2974, H03K 342, H03K 326

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050650440

ABSTRACT:
At least one electric pulse having a predetermined voltage which is higher than a switching voltage for a pnpn semiconductor device and a predetermined width is applied across the pnpn semiconductor device. The electric pulse width is set not to turn the pnpn semiconductor device on. Consequently, a predetermined amount of carriers are accumulated in the pnpn semiconductor device. In this circumstance, a trigger light is supplied to the pnpn semiconductor device to be turned on. As a result, an energy of the trigger light is largely decreased as compared to a conventional method.

REFERENCES:
"SCR Manual" Third Edition, General Electric, p. 7.
"Double Heterostructure Optoelectronic Switch as a Dynamic Memory with Low-Power Consumption", by K. Kasahara et al., Appl. Phys. Lett., vol. 52, Feb. 29, 1988, pp. 679-681.

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