Method for driving a nonvolatile semiconductor memory device

Details Method for driving a nonvolatile semiconductor memory device Method for driving a nonvolatile semiconductor memory device

2011-06-14

2011-06-14

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185140, C365S185290

Reexamination Certificate

active

07961524

ABSTRACT:
A method for driving a nonvolatile semiconductor memory device is provided. The nonvolatile semiconductor memory device has source/drain diffusion layers spaced from each other in a surface portion of a semiconductor substrate, a laminated insulating film formed on a channel between the source/drain diffusion layers and including a charge storage layer, and a gate electrode formed on the laminated insulating film, the nonvolatile semiconductor memory device changing its data memory state by injection of charges into the charge storage layer. The method includes, before injecting charges to change the data memory state into the charge storage layer: injecting charges having a polarity identical to that of the charges to be injected; and further injecting charges having a polarity opposite to that of the injected charges.

REFERENCES:
patent: 2003/0161192 (2003-08-01), Kobayashi et al.
patent: 2005/0006698 (2005-01-01), Matsuzaki et al.
patent: 2005/0237816 (2005-10-01), Lue et al.
patent: 2007/0036001 (2007-02-01), Kanda et al.
patent: 2007/0297227 (2007-12-01), Wu
U.S. Appl. No. 12/268,648, filed Nov. 11, 2008, Fujiki.
U.S. Appl. No. 12/405,626, filed Mar. 17, 2009, Shingu, et al.

Affiliated with

Also associated with

Rating

Method for driving a nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for driving a nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for driving a nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2624572