Method for driving a high side P-CHANNEL MOSFET

Details Method for driving a high side P-CHANNEL MOSFET Method for driving a high side P-CHANNEL MOSFET

2005-05-24

2005-05-24

Lam, Tuan T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C327S424000, C327S427000

Reexamination Certificate

active

06897706

ABSTRACT:
A P-CHANNEL MOSFET is configured as a high side switch by arranging a capacitor between the P-CHANNEL MOSFET gate and a pair of push/pull transistors in a control circuit. A pull-up resistor is connected with the high side supply, one leg of the capacitor and with the gate of the P-CHANNEL MOSFET. In a two-phase electrical drive circuit, a pair of P-CHANNEL MOSFETS is connected with the high side supply and a pair of N-CHANNEL MOSFETS is connected with the low side supply.

REFERENCES:
patent: 4639653 (1987-01-01), Anderson et al.
patent: 4669004 (1987-05-01), Moon et al.
patent: 6512645 (2003-01-01), Patti et al.
patent: 6611157 (2003-08-01), Usui

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