Method for driving a field-effect transistor

Details Method for driving a field-effect transistor Method for driving a field-effect transistor

1997-08-06

1999-12-07

Wells, Kenneth B.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327427, 327434, 36518501, 365182, H03K 1774

Patent

active

05999035&

ABSTRACT:
A method for driving a field-effect transistor having a source section, a drain section and a gate section, includes applying a gate voltage to the gate section and causing the formation and/or maintenance of an electrically conductive channel between the source section and the drain section. After the channel has been formed, the gate section is disconnected from a gate voltage supply source which applies the gate voltage to the gate section.

REFERENCES:
patent: 4281399 (1981-07-01), Yamamoto
patent: 5220528 (1993-06-01), Mielke
patent: 5241502 (1993-08-01), Lee et al.
"Novel High Voltage Silicon-On-Insulator MOSFETs" (Ratnam et al.), Solid State Electronics, vol. 35, No. 12, pp. 1745-1750, May 1992.

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