Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-02-02
1996-10-15
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 19, 257187, 257197, 257 51, 257 65, 257565, 437 20, 437 22, 437 31, 437966, 437976, H01L 2906, H01L 21265
Patent
active
055656900
ABSTRACT:
A method for doping a strained heterojunction semiconductor device includes heating a substrate (16) having a strained mono-crystalline semiconductor region (22) to a temperature above room temperature. While the substrate (16) is heated, dopants are ion implanted into the strained mono-crystalline semiconductor region (22) to minimize implant related damage. Thereafter the substrate (16) is heated under non-steady state conditions for a time sufficient to activate the implanted dopant and anneal implant related damage while minimizing relaxation of the strained heterojunction.
REFERENCES:
patent: 4818721 (1989-04-01), Wang
patent: 4956698 (1990-09-01), Wang
patent: 5087576 (1992-02-01), Edmond et al.
patent: 5212101 (1993-05-01), Canham et al.
patent: 5357119 (1994-10-01), Wang et al.
Lie et al., Steady-State Versus Rapid Thermal Annealing of Phosphorus-Implanted Pseudomorphic Si(100)/Ge.sub.0.12 Si.sub.0.88, Apr. 1994, SRC Pub C94167, pp. 1-6.
Lie Donald Y. C.
Smith T. C.
Steele John W.
Theodore N. David
Jackson Kevin B.
Motorola Inc.
Wojciechowicz Edward
LandOfFree
Method for doping strained heterojunction semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for doping strained heterojunction semiconductor devices , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for doping strained heterojunction semiconductor devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1248349