Method for doping silicon wafers using Al.sub.2 O.sub.3 /P.sub.2

Details Method for doping silicon wafers using Al.sub.2 O.sub.3 /P.sub.2 Method for doping silicon wafers using Al.sub.2 O.sub.3 /P.sub.2

1988-01-21

1990-01-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

252950, H01L 21225

Patent

active

048913316

ABSTRACT:
A doping composition and method for doping a silicon wafer with phosphorous in which the composition contains (A) a high purity Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound having a mole ratio of P.sub.2 O.sub.5 /Al.sub.2 O.sub.3 of about 1/1 to 4/1: and (B) a vehicle for the Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound for application as a paste to provide a thin layer on the silicon wafer which is fired to provide an easily-removed powdery layer on the wafer.

REFERENCES:
patent: 3303070 (1967-02-01), Schmidt et al.
patent: 3354005 (1967-11-01), Lepiane et al.
patent: 3914138 (1975-10-01), Rai-Choudhury
patent: 3998668 (1976-12-01), Florence et al.
patent: 4059669 (1977-11-01), Thomas
patent: 4104091 (1978-08-01), Evans, Jr. et al.

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