Method for doping semiconductors in centrifuge

Details Method for doping semiconductors in centrifuge Method for doping semiconductors in centrifuge

1974-04-08

1976-05-18

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

118 491, 148188, 427 85, H01L 21225

Patent

active

039575470

ABSTRACT:
A semiconductor material is doped or alloyed under vacuum with an impurity by thermal decomposition and by sedimentation resulting from centrifugal force. The doping material is alternatively applied by evaporation before being subjected to centrifugal force and may be heated up to the melting point before completion of the centrifugal action. A centrifuge is provided having a thermal insulating layer between the outer wall of a rotor and a support for basic semiconductor material to be doped. The doping impurity material to be evaporated onto the basic solid state material is placed in the center of the centrifuge rotor.

REFERENCES:
patent: 2996418 (1961-08-01), Bleil
patent: 3301213 (1967-01-01), Grochowski et al.
patent: 3594227 (1971-07-01), Oswald
patent: 3713883 (1973-01-01), Lien
patent: 3806360 (1974-04-01), Briody

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