Method for doping semiconductor wafers by rapid thermal processi

Details Method for doping semiconductor wafers by rapid thermal processi Method for doping semiconductor wafers by rapid thermal processi

1985-10-08

1987-04-28

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

H01L 21383

Patent

active

046611770

ABSTRACT:
Doping of a semiconductor wafer is accomplished by placing the wafer in close proximity to a solid planar dopant source and rapidly heating the combination to a high temperature for a short time in a rapid thermal processing apparatus.

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patent: 4566913 (1986-01-01), Brodsky et al.
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