Method for doping semi-conductor material during epitaxial growt

Details Method for doping semi-conductor material during epitaxial growt Method for doping semi-conductor material during epitaxial growt

1987-12-09

1989-02-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437107, 437105, 437108, 437 24, 437 82, 148DIG169, H01L 2136

Patent

active

048065021

ABSTRACT:
A method for producing a doped semiconductor layer on a semiconductor substrate, employing particle radiation, including the steps of initially applying an adsorbed layer containing a doping substance to the semiconductor substrate; controlling the concentration of the doping substance in the adsorbed layer; growing a semiconductor layer having a crystal lattice structure on the substrate; performing a secondary implantation operation for incorporating the doping substance in the crystal lattice of the semiconductor layer; and performing a heat treatment for removing crystal lattice imperfections and incorporating the doping substance into crystal lattice positions.

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