Fishing – trapping – and vermin destroying
Patent
1991-05-03
1993-02-02
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437105, 437107, 437167, 437987, 148DIG40, H01L 21223
Patent
active
051837790
ABSTRACT:
A method is disclosed for the incorporation of relatively high vapor pressure elements into good quality GaAs at extremely low T.sub.s using the migration enhanced epitaxy techinque. Zinc was doped in GaAs material grown at a low T.sub.s of 120.degree. C. Zinc may thus be used as a p-type dopant replacing more toxic Be. Similarly, other high vapor pressure elements can be incorporated much more efficiently into the material grown at low T.sub.s.
REFERENCES:
patent: 3305412 (1967-02-01), Pizzarello
patent: 3642544 (1972-02-01), Keyes et al.
patent: 3901746 (1975-08-01), Boucher
patent: 3979235 (1976-09-01), Boucher
patent: 4119993 (1978-10-01), Hartnagel et al.
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4592793 (1986-06-01), Hovel et al.
patent: 4828935 (1989-05-01), Jonker et al.
patent: 4855013 (1989-08-01), Ohta et al.
patent: 4876218 (1989-10-01), Pessa et al.
patent: 4935385 (1990-06-01), Biegelsen
Tadayon et al. "Growth of GaAs at Low Substrate Temperatures, and the Posility of Zinc Doping at Low Substrate Temperatures", 177th Electrochemical Society Meeting, Montreal, Quebec, CA (5/6-11/90).
Tadayon et al. "A Novel Method for the Growth of Good Quality GaAs at Extremely Low Substrate Temperatures (as Low as 120.degree. C.)", Journal of Vacuum Science & Technology B, vol. 8, No. 2, 131 (Mar. 1990).
Tadayon et al. "Reduction of Be Diffusion in GaAs by Migration-Enhanced Epitaxy", Applied Physics Letters, vol. 55, 59 (1989).
Shtrikman et al. "High-Mobility Inverted Selectively Doped Heterojunctions", J. Vac. Sci. Technol. B, vol. 6, 670 (1988).
Tadayon et al. "Growth of GaAs-Al-GaAs by Migration-Enhanced Epitaxy", Applied Physics Letters, vol. 53, 2664 (1988).
Kaminska et al. "Structural Properties of As-rich GaAs Grown by Molecular Beam Epitaxy at Low Temperatures", Applied Physics Letters, vol. 54, 1881 (1989).
Smith et al, "New MBE Buffer used to Eliminate Backgating in GaAs MESFETs", IEEE Electron Device Letters, vol. 9, 77 (1988).
Horikoshi et al. "Low Temeprature Growth of GaAs and AlAs-GaAs Quantum Well Layers by Modified MBE", Japan J. Appl. Phys., vol. 25, L868 (1986).
Juang et al. "Growth and Properties of InAlAs/InGaAs, GaAs:In and InGaAs/GaAs Multilayers", J. Crystal Growth, vol. 81, 363 (1987).
Missous et al. "Electrical Properties of Indium Doped GaAs Layers Grown by MBE", J. Crystal Growth, vol. 81, 314 (1987).
Metze et al. "Effects of Very Low Growth Rates on GaAs Grown by MBE at Low Substrate Temperatures", Appl. Phys. Lett., vol. 42, 818 (1983).
Tadayon et al. "Increase in Electrical Activation and Mobility of Si-diped GaAs, Grown at Low Substrate Temperatures, by the Migration-Enhanced Epitaxy Method", J. Appl. Phys., vol. 67, No. 1, pp. 589-591, Jan. 1990.
Raiston et al. "Intermixing of Al.sub.x Ga.sup.1-x Ag/GaAs Superlatices by Pulsed Laser Irradiation", Appl. Phys. Lett., vol. 50, No. 25, 1817 (Jun. 22, 1987).
Tadayon Bijan
Tadayon Saied
Chaudhari C.
Hearn Brian E.
Kap George A.
McDonnell Thomas E.
The United States of America as represented by the Secretary of
LandOfFree
Method for doping GaAs with high vapor pressure elements does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for doping GaAs with high vapor pressure elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for doping GaAs with high vapor pressure elements will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-6772