Method for doping epitaxial layers using doped substrate materia

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438502, H01L 21208

Patent

active

058613218

ABSTRACT:
A method is provided for producing an n-type or p-type epitaxial layer using a doped substrate material. The method includes growing a substrate (12), preferably from a material to which an epitaxial layer can be lattice-matched. The substrate (12) is doped with a predetermined concentration of dopant (14). Preferably, the dopant (14) possesses the ability to rapidly diffuse through a material. An epitaxial layer (16) is grown upon the doped substrate (12). The epitaxial layer (16) and the doped substrate are annealed, thereby causing the dopant (14) to diffuse from the substrate (14) into the epitaxial layer (16).

REFERENCES:
patent: 4236947 (1980-12-01), Baliga
patent: 4904337 (1990-02-01), Elliott et al.
patent: 4927773 (1990-05-01), Jack et al.
patent: 5137838 (1992-08-01), Ramde et al.
patent: 5399503 (1995-03-01), Saito et al.
patent: 5454885 (1995-10-01), Dudoff et al.
patent: 5535699 (1996-07-01), Kawazu et al.
G. L. Destefanis, "Electrical Doping of HgCdTe By Ion Implantation and Heat Treatment," Journal of Crystal Growth 86, 1988, pp. 700-722.
L. O. Bubulac, "Defects, Diffusion and Activation in Ion Implanted HgCdTe," Journal of Crystal Growth 86, 1988, pp. 723-734.
P. Bouchut, et al., "High-efficiency infrared light emitting diodes made in liquid phase epitaxy and molecular beam epitaxy HgCdTe layers," J. Vac. Sci. Technol B, vol. 9, No. 3, May/Jun., 1991, pp. 1794-1798.
G. Destefanis, et al., "Large Improvement in HgCdTe Photovoltaic Detector Performances at LETI," Journal of Electronic Materials, vol. 22, No. 8, 1993, pp. 1027-1032.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for doping epitaxial layers using doped substrate materia does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for doping epitaxial layers using doped substrate materia, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for doping epitaxial layers using doped substrate materia will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1246272

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.