Method for doping a semiconductor wafer having a diffusivity enh

Details Method for doping a semiconductor wafer having a diffusivity enh Method for doping a semiconductor wafer having a diffusivity enh

1992-12-24

1994-02-15

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 70, 437141, 437904, H01L 21265

Patent

active

052866602

ABSTRACT:
A diffusivity and a solubility of dopant atoms are increased within a semiconductor wafer (30). A portion (36) of the semiconductor wafer (30) is disrupted by a technique of ion implantation thereby forming a defect layer (36). A predeposition layer (37) is formed by placing the semiconductor wafer (30) in a predeposition furnace. The defect layer (36) has a large number of point defects in a semiconductor crystal lattice which accept dopant atoms in excess of their solid solubility limit. The point defects increase the diffusivity and solubility of the dopant atoms thereby increasing a junction depth and surface concentration in subsequent high temperature diffusion steps.

REFERENCES:
patent: 3796929 (1974-03-01), Nicholas et al.
patent: 4216030 (1980-08-01), Graul et al.

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