Method for dividing plural semiconductor devices formed on singl

Details Method for dividing plural semiconductor devices formed on singl Method for dividing plural semiconductor devices formed on singl

1995-10-31

1998-04-07

Gorgos, Kathryn L.

Semiconductor device manufacturing: process

Semiconductor substrate dicing

438948, H01L 21304

Patent

active

057364532

ABSTRACT:
A method for dividing a plural number of semiconductor devices into individual semiconductor devices to increase the number of chips manufactured per wafer by forming scribing lines in narrow width. Isotropic etching, such as plasma etching in CF.sub.4, O.sub.2 gas, is carried out by utilizing resist layer 31c to 35a as a mask. Then by carrying out heat treatment the resist layer 31 to 35a loosens, and as a result, side walls of the passivation layer 15 are covered with the resist layer. N type epitaxial layer 4 of the openings 24 and 25 for the scribing line is etched by carrying out isotropic plasma etching once again. Since the side walls of the passivation layer 15 of the openings 24 and 25 for the scribing line are covered with the resist layer, the openings 24 and 25 are not etched in the horizontal direction.

REFERENCES:
patent: 4729971 (1988-03-01), Coleman
patent: 4929300 (1990-05-01), Wesleister
patent: 4935936 (1990-06-01), Nelson et al.
patent: 5259925 (1993-11-01), Herrick et al.
patent: 5556735 (1996-09-01), Ivory et al.

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