Method for diffusion of impurities

Details Method for diffusion of impurities Method for diffusion of impurities

1984-10-10

1986-01-21

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, H01L 21385

Patent

active

045655880

ABSTRACT:
In the particular embodiments of the invention described in the specification, impurities are diffused into a silicon substrate by applying a solution of the impurity to the substrate, drying the substrate and subjecting it to a glow discharge in an inert gas atmosphere at a pressure of 0.2 to 0.7 Torr and a substrate temperature of 300.degree. C. A semiconductor with n-type properties is formed by using phosphoric acid to provide phosphorus as the impurity and a p-type semiconductor is formed by using boric acid to provide boron as the impurity. Impurity depths of less than one .mu.m are obtained using a solution containing 0.01 parts per 1000 by volume of the impurity.

REFERENCES:
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patent: 3576685 (1971-04-01), Swann et al.
patent: 3615943 (1971-10-01), Genser
patent: 3915766 (1975-10-01), Pollack et al.
patent: 4206026 (1980-06-01), Briska et al.
patent: 4360393 (1982-11-01), Koval
patent: 4362766 (1982-12-01), Dannhauser et al.

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