Method for diffusing P-type material using boron disks

Details Method for diffusing P-type material using boron disks Method for diffusing P-type material using boron disks

1987-10-26

1989-08-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437169, H01L 21385

Patent

active

048574805

ABSTRACT:
A method of depositing P-type material on one or more semiconductor substrate wafers in a MOSFET fabrication process, utilizing boron disks. The boron disks are passivated by exposing them to nitrogen gas within a reaction chamber, and then subsequently oxidized by flowing gaseous oxygen thereover. P-type material is diffused from the boron disks onto the surface of the wafers by flowing nitrogen gas over the disks and wafers within the reaction chamber, and subsequently flowing a mixture of nitrogen and oxygen gas over the disks and wafers at a predetermined temperature and flow rate, and for a predetermined length of time. The wafers produced according to the method of the present invention are characterized by high yield, few surface or near-surface defects, and uniform P+ sheet resistance. The method is substantially less expensive to implement than prior art ion implantation techniques for fabricating MOS devices.

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