Method for diffusing an impurity into a semiconductor body

Details Method for diffusing an impurity into a semiconductor body Method for diffusing an impurity into a semiconductor body

1976-12-16

1978-07-25

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148187, 148191, H01L 21225

Patent

active

041027159

ABSTRACT:
A silicon oxide layer containing a group III element such as boron, aluminum or gallium is formed on a semiconductor substrate. The substrate is then heat treated at 600.degree. C - 1200.degree. C in a nitrogen atmosphere and a diffusion process carried out thereafter. In this manner, the impurity diffused surface of the semiconductor body is controlled to a low concentration not higher than 10.sup.18 /cm.sup.3 of the group III element. This is due to the fact that the silicon oxide layer containing the group III element (that is, the so-called doped oxide) is partly converted to a nitride in the course of an ammonia treatment resulting in an impurity source for the low concentration diffusion. The present method is useful in forming the base region of an NPN transistor, for example.

REFERENCES:
patent: 3437533 (1969-04-01), Dingwall
patent: 3869322 (1975-03-01), Cuomo et al.
patent: 4006046 (1977-02-01), Pravin

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