Method for diffusing a semiconductor substrate through a metal s

Details Method for diffusing a semiconductor substrate through a metal s Method for diffusing a semiconductor substrate through a metal s

1985-07-19

1987-06-02

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576R, 29591, 148187, 148188, H01L 21385

Patent

active

046691766

ABSTRACT:
A method for forming a diffused region on a semiconductor substrate is provided. A silicide layer is formed in a region of a substrate where a diffused layer is to be formed and a material containing an impurity to be defined into the substrate deposited on the silicide layer. The device is heat treated to cause the impurity to diffuse through the silicide layer into the substrate. The method may be used to produce a MOSFET.

REFERENCES:
patent: 3690968 (1972-09-01), Fa et al.
patent: 4505027 (1985-03-01), Schwabe et al.
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4563805 (1986-01-01), Scovell et al.
"Rapid Annealing Using Halogen Lamps", J. Kato and S. Iwamatsu, Journal of the Electro-Chemical Society, vol. 131, pp. 1145-1152, May, 1984.
"Application of Halogen Lamp Annealing for CMOS VLSI Processing", S. Iwamatsu et al., Abstract No. 216, presented at Detroit, Michigan, Meeting, Oct. 1982.

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