Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2007-03-20
2007-03-20
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S094000, C117S095000, C117S104000, C117S105000, C117S929000, C423S446000
Reexamination Certificate
active
10491858
ABSTRACT:
The present invention relates to a method for diamond coating of substrates in which the substrate is exposed in a vacuum atmosphere to a reactive gas mixture excited by means of a plasma discharge, the plasma discharge comprising a plasma beam (14) in an evacuated receiver (16) that is formed between a cathode chamber (1) and an anode (2), and the reactive gas mixture comprising a reactive gas and a working gas, the reactive gas in (9) and the working gas in (8) and/or (9) introduced into the receiver, and the receiver (16) is evacuated by a pump arrangement (15), and the hydrogen concentration of the reactive gas mixture being 0–45 vol. %.
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Franz David
Karner Johann
Koda & Androlia
Kunemund Robert
Unaxis Balzers Aktiengesellschaft
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