Method for device metallization by forming a contact plug and in

Details Method for device metallization by forming a contact plug and in Method for device metallization by forming a contact plug and in

1990-02-16

1991-02-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 148DIG35, 357 67, 357 71, H01L 2144

Patent

active

049944100

ABSTRACT:
A semiconductor device, device metallization, and method are described. The device metallization, which is especially designed for submicron contact openings, includes titanium silicide to provide a low resistance contact to a device region, titanium nitride and sputtered tungsten to provide a diffusion barrier, etched back chemical vapor deposited tungsten for planarization, and aluminum or an aluminum alloy for interconnection.

REFERENCES:
patent: 4624864 (1986-11-01), Hartmann
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4829024 (1989-05-01), Klein et al.
patent: 4884123 (1989-11-01), Dixit et al.

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