Method for determining whether holes in dielectric layers are op

Details Method for determining whether holes in dielectric layers are op Method for determining whether holes in dielectric layers are op

1977-05-16

1978-07-25

Krawczewicz, Stanley T.

Electricity: measuring and testing

Conductor identification or location

Inaccessible

324 51, 324 62, 324158P, G01R 2702

Patent

active

041032284

ABSTRACT:
The method is used to determine whether holes etched into a dielectric layer which has been formed on a surface of a semiconductor wafer are open. A plurality of specimen holes are formed in a selected portion of the wafer simultaneously with the formation of the holes to be tested. The specimen holes are then contacted with an electrolytic probe, and the wafer is contacted with an output probe. The resistance, through the wafer, between the electrolytic probe and the output probe is determined. Since the resistance is related to the amount of dielectric material remaining in the hole, a non-destructive determination may be made as to whether the device should be subjected to additional etching.

REFERENCES:
patent: 3735253 (1973-05-01), Seger
patent: 3794912 (1974-02-01), Severin et al.
patent: 3803485 (1974-04-01), Crites et al.
patent: 3803489 (1974-04-01), Miller
patent: 4021735 (1977-05-01), Gutberlet et al.
Koens, Micromanipulator Liquid Contact Tester Probe, IBM Technical Disclosure Bulletin, Jun. 1972, p. 344.

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