Thermal measuring and testing – Temperature measurement – Nonelectrical – nonmagnetic – or nonmechanical temperature...
Patent
1997-03-10
2000-09-12
Gutierrez, Diego
Thermal measuring and testing
Temperature measurement
Nonelectrical, nonmagnetic, or nonmechanical temperature...
374120, G01K 1100
Patent
active
061167797
ABSTRACT:
An optical method for measuring the temperature of a substrate material with a temperature dependent band edge. In this method both the position and the width of the knee of the band edge spectrum of the substrate are used to determine temperature. The width of the knee is used to correct for the spurious shifts in the position of the knee caused by: (i) thin film interference in a deposited layer on the substrate; (ii) anisotropic scattering at the back of the substrate; (iii) the spectral variation in the absorptance of deposited layers that absorb in the vicinity of the band edge of the substrate; and (iv) the spectral dependence in the optical response of the wavelength selective detection system used to obtain the band edge spectrum of the substrate. The adjusted position of the knee is used to calculate the substrate temperature from a predetermined calibration curve. This algorithm is suitable for real-time applications as the information needed to correct the knee position is obtained from the spectrum itself. Using a model for the temperature dependent shape of the absorption edge in GaAs and InP, the effect of substrate thickness and the optical geometry of the method used to determine the band edge spectrum, are incorporated into the calibration curve.
REFERENCES:
patent: 4437761 (1984-03-01), Kroger et al.
patent: 4671651 (1987-06-01), Toyoda et al.
patent: 4703175 (1987-10-01), Salour et al.
patent: 4841150 (1989-06-01), Walter
patent: 4979133 (1990-12-01), Arima et al.
patent: 5098199 (1992-03-01), Amith
patent: 5118200 (1992-06-01), Kirillov
patent: 5213985 (1993-05-01), Sandroff et al.
patent: 5388909 (1995-02-01), Johnson
patent: 5568978 (1996-10-01), Johnson
Hellman et al., "IR Transmission Spectroscopy of GaAs During Molecular Beam Epitaxy", J. Cryst. Growth 81, 38 (1987).
Weilmeier et al., "A New Optical Temperature Measurement Technique for Semiconductor Substrates in Molecular Beam Epitaxy", Can. J. Phys. 69, 422 (1991).
Lavoie et al., "Diffuse Optical Reflectivity Measurements on GaAs During Molecular Beam Epitaxy Processing", J. Vac. Sci. Technol. A 10, 930 (1992).
Johnson et al., "Temperature Dependence of the Urbach Edge in GaAs", J. Appl. Phys. 78, 5609 (1995).
Beaudoin et al., "Temperature Dependence of the Optical Absorption Edge in Indium Phosphide", Mat. Res. Soc. Symp. Proc.(1996).
DRS 1000 data sheet, Thermionics Northwest, 231-B Otto St., Port Townsend, WA 98368.(No date).
Shane R. Johnson, PhD Thesis, University of British Columbia, oral defense Mar. 11, 1996, thesis submitted to University of British Columbia Library, Mar. 15, 1996.
Johnson Shane R.
Tiedje J. Thomas
Fernandez Maria
Gutierrez Diego
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