Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2007-04-17
2007-04-17
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S014000, C438S019000, C438S017000
Reexamination Certificate
active
10664665
ABSTRACT:
The present invention is generally directed to various methods for determining the reliability of dielectric layers. In one illustrative embodiment, the method comprises providing a device having a dielectric layer, applying a plurality of constant voltage pulses to the device and measuring a current through the dielectric layer after one or more of the constant voltage pulses has been applied.
REFERENCES:
patent: 5208453 (1993-05-01), Hostetler
patent: 5433790 (1995-07-01), Niino et al.
patent: 5804975 (1998-09-01), Alers et al.
patent: 6602729 (2003-08-01), Lin
B.P. Linder et al “Gale Oxide Breakdown under Current Limited Constant Voltage Stress” 2000 Symposium on VLSI Tech Digest of Technical Papers pp. 214-215.
Salman et al., “Gate Dielectric Breakdown and Latent Failures of Ultrathin (˜13A) DPN under Pulsed Stress in Partially Depleted SOI MOSFETs”.
Wu et al., “Breakdown and Latent Damage of Ultra-Thin Gate Oxides under ESD Stress Conditions,” EOS/ESD Symposium 00-287-295.
Montoya et al., “A Study of the Mechanisms for ESD Damage to Reticles,” EOS/ESD Symposium 00-394-405.
Hunter, “The Analysis of Oxide Reliability Data,” 98 IRW Final Report, 114-34.
Linder et al., “Growth and Scaling of Oxide Conduction after Breakdown,” 2003 IEEE, 402-05.
Alam and Smith, “A Phenomenological Theory of Correlated Multiple Soft-Breakdown Events in Ultra-Thin Gate Dielectrics,” 2003 IEEE, 406-411.
Beebe Stephen G.
Salman Akram Ali
Taylor Kurt O.
Zhao Xuejun
Advanced Micro Devices , Inc.
Schillinger Laura M.
Williams Morgan & Amerson P.C.
LandOfFree
Method for determining the reliability of dielectric layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for determining the reliability of dielectric layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining the reliability of dielectric layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3806095