Method for determining the quality of light scattering material

Details Method for determining the quality of light scattering material Method for determining the quality of light scattering material

1981-03-16

1983-07-05

Arnold, Bruce Y.

Optics: measuring and testing

By particle light scattering

With photocell detection

356237, G01N 2101

Patent

active

043915248

ABSTRACT:
A method of determining the crystalline quality of heteroepitaxial silicon material, particularly silicon-on-sapphire (SOS) and of homoepitaxial silicon material which uses the light scattering is disclosed. The material is exposed to a beam of light of a selected wavelength, and scattered light having an intensity above a threshold is detected to provide a signal which is used to control the intensity of a display beam of a visual display device. The threshold is varied to thereby vary the display beam intensity so as to provide the minimum intensity of display beam which yields a full display. The value of the thusly adjusted threshold intensity is used as a direct measure of the quality of the material.

REFERENCES:
patent: 4314763 (1982-02-01), Steigmeier et al.
patent: 4352016 (1982-09-01), Duffy et al.
patent: 4352017 (1982-09-01), Duffy et al.

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