Method for determining the point of zero zeta potential of semic

Details Method for determining the point of zero zeta potential of semic Method for determining the point of zero zeta potential of semic

1982-03-31

1985-04-16

Kaplan, G. L.

Electricity: measuring and testing

Determining nonelectric properties by measuring electric...

Semiconductors for nonelectrical property

204 1T, 324158D, G01N 2702

Patent

active

045118388

ABSTRACT:
A method for determining the potential of zero charge of an unpowdered semiconductor material. The semiconductor material is used as the working electrode 12 of a standard three-electrode photoelectrochemical cell 11. The onset potential of the semiconductor material is measured at several different cell temperatures. The slope of the graph of onset potential versus temperature is used to compute the potential of zero charge.

REFERENCES:
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patent: 3208919 (1965-09-01), Sennett et al.
patent: 3658672 (1972-04-01), Edward
patent: 4168212 (1979-09-01), Faktor et al.
Willem Smit et al., J. Colloid & Interface Science, vol. 60, No. 2, pp. 299-307, Jun. 15, 1977.
E. Gileadi et al., "Interfacial Electrochemistry, an Experimental Approach", pp. 33, 237-262, (1975).

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