Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-07-23
1998-05-05
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 13, 117 15, 117201, C30B 1520
Patent
active
057468257
ABSTRACT:
A method and a device is provided for determining the diameter of a monocrystal growing at a crystallization boundary during the pulling of the monocrystal from a melt. The method includes imaging a part of the crystallization boundary on at least one mirror, observing the mirror image and determining the diameter of the monocrystal from the observed relative position of the crystallization boundary on the mirror image.
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Journal of the Electrochemical Society, Jun. 1974, USA, vol. 121, No. 6, N 0013-4651, pp. 822-826, XP 002014771, Pruett et al. "X-ray Imaging Technique for Observing Liquid Encapsulation Czochralski Crystal Growth" 3rd International Conference on Crystal Growth,, Marseille France 5-9 Jul. 1971, vol. 13-14, ISSN 0022-0248, Journal of Crystal Growth, May 1972 Netherlands, pp. 619-623 XP 0002014772.
Gartner K.J. et al.; "An Electronic Device Including a TV-System for Controlling the Crystal Diameter During Czochralski Growth".
Ammon Wilfried Von
Thanner Ludwig
Weidner Herbert
Garrett Felisa
Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
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