Method for determining suitability of a resist in...

Details Method for determining suitability of a resist in... Method for determining suitability of a resist in...

2007-07-06

2010-12-28

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S296000, C430S330000, C430S942000, C382S145000

Reexamination Certificate

active

07858276

ABSTRACT:
In one disclosed embodiment, the present method for determining resist suitability for semiconductor wafer fabrication comprises forming a layer of resist over a semiconductor wafer, exposing the layer of resist to patterned radiation, and determining resist suitability by using a scatterometry process prior to developing a lithographic pattern on the layer of resist. In one embodiment, the semiconductor wafer is heated in a post exposure bake process after scatterometry is performed. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source in a lithographic process. In other embodiments, patterned radiation is provided by an electron beam, or ion beam, for example. In one embodiment, the present method determines out-gassing of a layer of resist during exposure to patterned radiation.

REFERENCES:
patent: 5763124 (1998-06-01), Koizumi et al.
patent: 7642102 (2010-01-01), Funk et al.
patent: 2004/0005507 (2004-01-01), Lakkapragada et al.

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