Method for determining structural defects in semiconductor wafer

Measuring and testing – Vibration – By mechanical waves

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73618, G01N 2904

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active

047412127

ABSTRACT:
A method and apparatus for determining the location and size of structural defects in a body of solid material, particularly regions of thermoplastic deformation in semiconductor wafers. An acoustical focused beam generated by an ultrasonic transducer, having a pulsed frequency of at least 75 MHZ, is transmitted through the body to provide an attenuated signal pattern which manifests structural defects, such as slip planes which can result in wafer warp, as well as cracks, bubbles, foreign particles or segregation zones and internal interfaces.

REFERENCES:
patent: 2971372 (1961-02-01), Lewis et al.
patent: 4008602 (1977-02-01), Love
patent: 4011748 (1977-03-01), Bond et al.
patent: 4028933 (1977-06-01), Lemons et al.
patent: 4366713 (1983-01-01), Gilmore et al.
M. Moghisi et al., "An Inexpensive Computer-Controlled Ultrasonic C-Scan System," NDT International, vol. 16, No. 1, Feb. 1983, pp. 9-12.

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