Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2007-06-26
2007-06-26
Young, Christopher G. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S311000, C430S313000, C430S322000, C382S145000
Reexamination Certificate
active
10808806
ABSTRACT:
A method for determining photoresist thickness is disclosed that can be used in a semiconductor fabrication process. A layer of material is formed that has one or more common characteristic relative to the material in the layer that is to be patterned in the semiconductor fabrication process. A layer of photoresist is then formed that has varying thickness. The thickness of the layer of photoresist is determined at a plurality of different points. The layer of photoresist is exposed, developed and etched. The remaining structures are then analyzed to determine photoresist thickness to be used in the semiconductor fabrication process. The determined photoresist thickness is then used in the semiconductor fabrication process to form structures on a semiconductor wafer.
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patent: 2003/0148198 (2003-08-01), Lakkapragada et al.
Single wafer process to generate reliable swing, by Yiming Gu, Cynthia Zhu, John L. Sturtevant,Proc. SPIE vol. 5038, p. 832-840, Metrology, Inspection, and Process Control for Microlithography XVII; May 2003, Daniel J. Herr; Ed.
Glass Kenneth
Glass & Associates
Integrated Device Technology Inc.
Young Christopher G.
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