Chemistry: analytical and immunological testing – Process or composition for determination of physical state... – Of crystal or crystalline material
Patent
1981-08-28
1984-01-31
Bernstein, Hiram H.
Chemistry: analytical and immunological testing
Process or composition for determination of physical state...
Of crystal or crystalline material
436136, 156601, G01N 2135
Patent
active
044290470
ABSTRACT:
The content of oxygen, if any, that is present in a body of essentially monocrystalline semiconductor material is determined by converting by heating all of the oxygen in the body to interstitial form. The oxygen content is measured by infrared beam evaluation of the absorption band to identify the interstitial oxygen present in the material.
REFERENCES:
patent: 4344815 (1982-08-01), Cazarra et al.
Katz, J. Electrochem. Soc.: Solid-State Science and Technology, Jul. 1978, pp. 1151-1155.
ASTM Standards, Part 43-Electronics, The Standard Designation: F 120-75, entitled "Infrared Absorption Analysis of Impurities in Single Crystal Semiconductor Materials."
ANSI/ASTM F 121-79, entitled "Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Analysis."
S. M. Hu, J. of Appl. Physics, 51 (11), Nov. 1980, entitled "Infrared Absorption Spectra of SiO.sub.2 Precipitates of Various Shapes in Silicon: Calculated and Experimental," pp. 8945-5948.
K. Tempelhoff, et al., Phys. Stat. Solidi, (a) 56, 213 (1979), pp. 213-223, entitled "Precipitation of Oxygen in Dislocation-Free Silicon."
E. M. Ryzhkova, et al., Sov. Phys. Semicond., entitled "Optical Properties of Oxygen in Silicon," vol. 11, No. 6, Jun. 1977, pp. 628-630.
Jastrzebski Lubomir L.
Lagowski Jacek
Bernstein Hiram H.
Cohen Donald S.
Lazar Joseph D.
Morris Birgit E.
RCA Corporation
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