Method for determining oxygen and carbon in silicon semiconducto

Details Method for determining oxygen and carbon in silicon semiconducto Method for determining oxygen and carbon in silicon semiconducto

1983-04-29

1986-05-20

Krass, Errol A.

Boots, shoes, and leggings

250338, 356346, G06F 1520, G06G 758

Patent

active

045905746

ABSTRACT:
An infrared Fourier transform spectrometer is used to measure the absorbance spectrum of a sample of unknown oxygen or carbon content. From the spectrum, the roughness of the wafer is defined, and such roughness definition is then used to calculate the oxygen or carbon content. The roughness can be defined by using the slope of the absorbance spectrum or by the degree of shift of the baseline of the oxygen or carbon peak.

REFERENCES:
patent: 3553444 (1971-01-01), Tong
patent: 4267572 (1981-05-01), Witte
patent: 4365303 (1982-12-01), Hannah et al.
patent: 4449819 (1984-05-01), Krause
"Computerized Infrared Spectroscopy via Fourier Transform Techniques", Koenig, J. L., American Laboratory, vol. 6, No. 9, Sep. 10, 1974, pp. 9-16.
Briska et al., IBM Technical Disclosure Bulletin, vol. 23, No. 1 (Jun. 1980), "Apparatus and Method for Determining the Carbon Content in Silicon Wafers.
Kulkarni et al., IBM Technical Disclosure Bulletin, vol. 23, No. 4 (Sep. 1980), pp. 1389-1390, "Determination of Interstitial Oxygen in Silicon Using Internal Calibration with Two Phonon Peaks".
Kulkarni et al., IBM Technical Disclosure Bulletin, vol. 25, No. 6 (Nov. 1982), pp. 2811-2812, "Purged FTIR Sample Chamber".
"American National Standard, pp. 523-524, Standard Test Methods for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption, Jan. 15, 1976.
American National Standard C131.37, approved Jan. 15, 1976 by American National Standards Institute, Standard Recommended Practices for Infrared Absorption Analysis of Impurities in Single Crystal Semiconductor Materials Designation: F120-75.
American National Standard, pp. 518-520, Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption, Jan. 15, 1976.
American National Standard, pp. 521-522, Standard Test Method for Interstitial Atomic Oxygen Content of Germanium by Infrared Absorption, Jan. 15, 1976.

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