Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2005-01-11
2005-01-11
Cuneo, Kamand (Department: 2829)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C438S072000, C438S636000
Reexamination Certificate
active
06841404
ABSTRACT:
A method for determining an optical constant of an bottom antireflective layer formed between a resist film and an underlying substrate in an optical lithography process in a process for fabricating a semiconductor device, the resist film having an absorption coefficient α′ of 1.5 μm−1to 3.0 μm−1with respect to an exposure wavelength, a base of the absorption coefficient α′ being 10, the method includes expressing an nominal dose due to a variation in thickness of the resist film by the sum of a monotonic increase term and a damped oscillation term, and selecting an optical constant of the bottom antireflective layer so that a minimum value closing to a maximum point indicative of a maximum value on a curve of a variation in the nominal dose on a side that the thickness is larger than that at the maximum point is substantially equal to the maximum value, or so that no maximum point exist on the curve wherein, expressing an exposure wavelength by λ and an extinction coefficient of the resist film by κ, the absorption coefficient α′ is a value having the following relationship with the λ and the κ.α′=4 π κλlog10(exp)
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Kawamura Daisuke
Shiobara Eishi
Cuneo Kamand
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Kilday Lisa
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