Optics: measuring and testing – Of light reflection
Reexamination Certificate
2007-05-29
2007-05-29
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
Of light reflection
Reexamination Certificate
active
10847423
ABSTRACT:
A method for modeling the complex refractive index of doped, strained or ultra-thin semiconductors starts with a model for a standard bulk material which may be in any form such as a pre-existing lookup table, a dispersion model derived from an effective medium approximation (EMA) or a critical point (CP) model. The modeling method perturbs the ∈2curve of the bulk material by enhancing, suppressing or shifting the strong features of the curve. A Kramers-Kronig transformation is then applied to the ∈2perturbation to obtain the corresponding perturbation to the ∈1curve. The combination of the perturbed ∈2curve and the correspondingly perturbed ∈1curve are then used to obtain the complex dielectric function or complex refractive index of the modified material.
REFERENCES:
patent: 5796983 (1998-08-01), Herzinger et al.
patent: 5798837 (1998-08-01), Aspnes et al.
patent: 6485872 (2002-11-01), Rosenthal et al.
patent: 6862095 (2005-03-01), Horie
patent: 7110640 (2006-09-01), LoCascio et al.
patent: 7110912 (2006-09-01), Tiwald
J.-Th. Zettler et al., “High precision UV-visible-near-IR Stokes vecter spectroscopy,”Thin Solid Films, vol. 234 (1993), pp. 402-407.
J. Leng et al., “Analytic representations of the dielectric functions of materials for device and structural modeling,”Thin Solid Films, vol. 313-314 (1998), 132-136.
C. Ygartua et al., “Characterization of Epitaxial Silicon Germanium Thin Films by Spectroscopic Ellipsometry,”ICSE Conference May 1997, 7 pages in length.
L. Vina et al., “Effect of heavy doping on the optical properties of the bank structure of silicon,”Physical Review B, vol. 29, No. 12, Jun. 15, 1984, pp. 6739-6751.
D.E. Aspnes et al., “Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV,”Physical Review B, vol. 29, No. 2, Jan.15, 1984, pp. 768-779.
C.C. Kim et al., “Modeling the optical dielectric function of semiconductors: Extension of the critical-point parabolic-band approximation,”Physical Review B, vol. 45, No. 20, May 15, 1992-II, pp. II 749-II 767.
F.L. Terry, Jr., “A modified harmonic oscillator approximation scheme for the dielectric constants of AlzGA1-xAs,”J. Appl. Phys., vol. 70, No. 1, Jul. 1, 1991, pp. 409-417.
E. Erman et al., “Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation,”J. Appl. Phys., vol. 56, No. 10, Nov. 15, 1984, pp. 2664-2671.
D.E. Aspnes et al., “Optical properties of AlxGa1-xAs,”J. Appl. Phys., vol. 60, No. 2, Jul. 15, 1986, pp. 754-767.
P.G. Snyder et al.,“Modeling AlxGa1-xAs optical constants as funcions of composition,”J. Appl. Phys., vol. 68. No. 11, Dec. 1, 1990, pp. 5925-5926.
U. Schmid et al., “Optical transistions in strained Ge/Si superlattices,”Physical ReviewB, vol. 45, No. 12, Mar. 15, 1992-II, pp. 6793-6801.
D.V. Lang et al., “Measurement of the band gap of GexSil-x/Si strained-layer heterstructures,”Appl. Phys. Lett., vol. 47, No. 12, Dec. 15, 1985, pp. 1333-1335.
A.P. Prudinikov et al., treatise “Integrals and series,”published under license by Gordon and Breach Science Publishers S.A.(© 1986), section entitled “Indefinite Integrals,” pp. 40-41.
Akanbi Isiaka O.
Stallman & Pollock LLP
Therma-Wave, Inc.
Toatley , Jr. Gregory J.
LandOfFree
Method for determining modifications to semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for determining modifications to semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining modifications to semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3771321