Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2006-05-16
2006-05-16
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C438S016000
Reexamination Certificate
active
07045384
ABSTRACT:
A method of determining a work function of a metal to be used as a metal gate material provides a metal-on-silicon (MS) Schottky diode on a silicon substrate. The MS Schottky diode is formed by deposition of the metal in a single step deposition through a shadow mask that is secured on the silicon substrate.
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Characteristices of Al/p-CuAgINSe Polycrystalline Thin Film Schottky Barrier Diodes; G Venkata Rao; Mar. 6, 2001Thin Film Laboratory, Department of Physics, Sri Venkateswara University; pp. 571-576.
Mei-Chu Woo Christy
Pan James N.
Advanced Micro Devices , Inc.
Lebentritt Michael
Stevenson Andre′ C.
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