Method for determining metal work function by formation of...

Semiconductor device manufacturing: process – Having diamond semiconductor component

Reexamination Certificate

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C438S016000

Reexamination Certificate

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07045384

ABSTRACT:
A method of determining a work function of a metal to be used as a metal gate material provides a metal-on-silicon (MS) Schottky diode on a silicon substrate. The MS Schottky diode is formed by deposition of the metal in a single step deposition through a shadow mask that is secured on the silicon substrate.

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patent: 6903433 (2005-06-01), McFarland et al.
Characteristices of Al/p-CuAgINSe Polycrystalline Thin Film Schottky Barrier Diodes; G Venkata Rao; Mar. 6, 2001Thin Film Laboratory, Department of Physics, Sri Venkateswara University; pp. 571-576.

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