Method for determining etching process conditions and...

Details Method for determining etching process conditions and... Method for determining etching process conditions and...

2006-01-10

2006-01-10

Wells, Nikita (Department: 2881)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C250S306000, C250S307000, C250S310000, C250S397000, C073S105000

Reexamination Certificate

active

06984589

ABSTRACT:
Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process.According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained.The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

REFERENCES:
patent: 6472662 (2002-10-01), Archie
“Electron Beam Testing Handbook”, Electron Beam Research 7thVolume, p. 261, Japan Association for the Promotion of Science, Application of Charged Particle Beams to Industry, Committee No. 132, the 98thResearch Report, Electron Beam Laboratory, Faculty of Engineering, Osaka University, May 1987 (Japanese and English version).

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