Method for determining endpoint of etch layer and etching...

Details Method for determining endpoint of etch layer and etching... Method for determining endpoint of etch layer and etching...

2006-05-16

2006-05-16

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S005000, C438S706000, C438S710000

Reexamination Certificate

active

07045467

ABSTRACT:
A method of determining the endpoint of an etch layer in a semiconductor element fabrication, wherein said element is comprised of at least a first material layer, a second material layer on said first material layer, said endpoint determining method comprises the steps of (i) determining the total emission intensity wavelength of the first material layer; (ii) determining the total emission intensity wavelength of the second material layer; (iii) plotting the scalar of the wavelength differential of the upper and lower layers; and (iv) choosing the highest peak of wavelength differential as the best range of endpoint detection wavelength.This method is particularly useful for etching stacks where the first and second material layers have endpoint emission wavelengths that are close to each other. This include nitrogen-rich silicon layer which is overlaid by an antireflective coating (ARC) layer, e.g. silicon nitride, Si3N4overlaid by bottom antireflective coating (BARC).

REFERENCES:
patent: 6009888 (2000-01-01), Ye et al.
patent: 6277716 (2001-08-01), Chhagan et al.
patent: 6368975 (2002-04-01), Balasubramhanya et al.
patent: 2003/0043383 (2003-03-01), Usui et al.

Affiliated with

Also associated with

Rating

Method for determining endpoint of etch layer and etching... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for determining endpoint of etch layer and etching..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining endpoint of etch layer and etching... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3598089