Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2005-09-27
2005-09-27
McPherson, John A. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S322000, C250S492220, C250S492200, C355S055000, C355S117000
Reexamination Certificate
active
06949319
ABSTRACT:
A depth of focus determination method for finding an upper limit value of depth of focus during exposure, when a resist layer that has been formed on a substrate surface is at least exposed by reduction projection of a reticle mask and developed to form a resist pattern. When the depth of focus at a specific pattern of the resist pattern is an upper limit value Fmax, a value Y expressed by the following equation (1) exhibits a maximum value or a minimum value. The upper limit value Fmaxis a positive value.in-line-formulae description="In-line Formulae" end="lead"?Y=f(F) Formula (1)in-line-formulae description="In-line Formulae" end="tail"?In Formula (1), F represents the depth of focus (μm), and f(F) represents a function with respect to the depth of focus, which function includes a top dimension (μm) and/or an edge dimension (μm) of a specific section of the specific pattern.
REFERENCES:
patent: 2003/0106999 (2003-06-01), Komuro et al.
patent: 11-040476 (1999-02-01), None
patent: 2000-260697 (2000-09-01), None
Chacko-Davis Daborah
McPherson John A.
Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt PLLC
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