Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1991-02-26
1993-04-06
Karlsen, Ernest F.
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
324158R, 324158T, G01R 2726, G01R 3122
Patent
active
052006930
ABSTRACT:
A method and apparatus for determining the carrier concentration and profile depth for pn semiconductor structures, and band discontinuities for heterojunction pn structures is disclosed. A more accurate measurement of carrier concentration and profile depth is obtained by initially measuring the pn junction intercept voltage of a pn semiconductor structure to be tested before the structure is exposed to a conventional capacitance-voltage (C-V) profiling process. The pn junction intercept voltage is employed to determine the pn junction capacitance which can then be compensated for in capacitance dependent formulae used for calculating the carrier concentration and profile depth. The intercept voltage can also be used to determine band discontinuities in a heterojunction pn structure. A fixed or retractable metal contact is employed to contact the p-type layer of a pn semiconductor structure to be tested and permit this initial measurement to be obtained. In a preferred form of the invention, a C-V profiling apparatus containing an electrolyte solution which etches through the structure to be tested as capacitance and current measurements are taken is employed. In the case of the fixed metal contact, the electrolyte first etches through the contact before it begins etching through the structure being tested.
REFERENCES:
patent: 3748579 (1973-07-01), Henry et al.
patent: 3803489 (1974-04-01), Miller
patent: 4028207 (1977-06-01), Faktor et al.
patent: 4101830 (1978-07-01), Greig
patent: 4168212 (1979-09-01), Faktor et al.
patent: 4241167 (1980-12-01), Collins et al.
patent: 4319187 (1982-03-01), Crandall
patent: 4380864 (1983-04-01), Das
patent: 4456879 (1984-06-01), Kleinknecht
patent: 4473795 (1984-09-01), Wood
patent: 4509012 (1985-04-01), Lin
patent: 4511838 (1985-04-01), Reichman et al.
patent: 4581576 (1986-04-01), Wang
patent: 4678989 (1987-07-01), Blood
patent: 4827212 (1989-05-01), Kamieniecki
patent: 4841239 (1989-06-01), Foell et al.
patent: 4859938 (1989-08-01), Kim et al.
patent: 4995939 (1991-02-01), Ferenczi et al.
patent: 5036271 (1991-07-01), Mazur et al.
"A Technique for Directly Plotting the Doping Profile of Semiconductor Wafers", by Salama et al, Solid St. Electron, pp. 178-181, Jul. 1970, vol. 14.
"A Feedback Method for Investigating Carrier Distributions in Semiconductors", by Milller, IEEE Trans. on Electron. Dev., vol. ED-19, #10, Oct. 1972, pp. 1103-1108.
"Doping Profile Measurements on Silicon Epitaxial Layers with Field-Controlled Planar Diodes", by Jihanyi, Solid State Elect., Dec. 1970, vol. 13, pp. 309-315, #3.
Kromer, H., "Measurement of Isotype Heterojunction Barriers by C-V Profiling", Applied Physics Letter 36 (4), Feb. 15, 1980.
Burns William J.
Cornell Research Foundation Inc.
Karlsen Ernest F.
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