Method for determining an optimal absorber stack geometry of...

Details Method for determining an optimal absorber stack geometry of... Method for determining an optimal absorber stack geometry of...

2006-08-22

2006-08-22

Barlow, John (Department: 2863)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C702S001000, C716S030000

Reexamination Certificate

active

07094507

ABSTRACT:
The present invention relates to a method for determining an optimal absorber stack geometry of a lithographic reflection mask comprising a reflection layer and a patterned absorber stack provided on the reflection layer, the absorber stack having a buffer layer and an absorber layer. The method is based on simulating aerial images for different absorber stack geometries in order to determine process windows corresponding to the absorber stack geometries. The optimal absorber stack geometry is identified by the maximum process window size. The invention further relates to a method for fabricating a lithographic reflection mask and to a lithographic reflection mask.

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patent: 6841786 (2005-01-01), Kamm
patent: 101 23 768 (2002-12-01), None

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