Method for determining an impurity concentration profile

Fishing – trapping – and vermin destroying

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437 24, H01L 2166

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056521510

ABSTRACT:
Impurity concentration profile is determined for a diffused layer of a semiconductor substrate by repeating a combination of etching of the diffused layer and measuring sheet resistance and/or hall resistance by using electrodes formed on the diffused layer. The etching of the diffused layer by a small amount is repeated in first portions aligned in the depth direction of the diffused layer, followed by etching of adjacent second portions aligned in the depth direction. The etching may be replaced by implanting inactive ions into portions of the diffused layer to generate high resistance for the portions.

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"Study on Three-Dimensional Distribution of Implanted Ions by He+ Backscattering Technique," Hiroshi Ishiwara et al., Proceedings of the 4th Conference on Solid State Devices, Tokyo, 1972, Supplement to the Journal of the Japan Society of Applied Physics, vol. 42, 1973, pp. 124-129.
"Resistivity of Bulk Silicon and of Diffused Layers in Silicon," John C. Irvin, The Bell System Technical Journal, vol. XLI, No. 2, Mar. 1962, pp. 387-411.

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