Semiconductor device manufacturing: process – Including control responsive to sensed condition
Reexamination Certificate
2000-08-29
2003-07-01
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Reexamination Certificate
active
06586261
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a method for determining a preceding wafer to be used for preceding processing among a plurality of semiconductor wafers constituting one lot, a method for determining a measuring wafer to be used for measurement of processing results among a plurality of wafers constituting one lot, and a method for adjusting the number of semiconductor wafers constituting one lot.
In fabrication of semiconductor devices, semiconductor wafers that are grouped into lots are subjected to a plurality of processes for every lot. In general, the performance of a fabrication apparatus used in a process varies with lots. The processing results therefore vary with lots even when all lots are subjected to the same process under the same processing conditions.
In order to suppress a variation in processing results among lots, preceding processing is adopted. That is, among a plurality of semiconductor wafers constituting one lot (hereinafter, referred to as inner-lot wafers), one to several semiconductor wafer(s) are selected as a preceding wafer or wafers. A given process is preliminarily performed for the preceding wafer(s). Based on the results of the given process on the preceding wafer(s), the conditions of the given process are adjusted, so that the other semiconductor wafers in the same lot are subjected to the given process under the adjusted conditions.
In fabrication of semiconductor devices, also, a measuring process is inserted during the fabrication to examine whether or not the results of a process already performed for a lot have reached the target value for the process. This measuring process is generally performed for one to several measuring wafer(s) selected among the inner-lot semiconductor wafers for improvement of the throughput.
Conventionally, as the preceding wafer or the measuring wafer, selected is a semiconductor wafer located outermost in a wafer box among inner-lot wafers, or a semiconductor wafer having the least wafer number (wafer number is given uniquely to each semiconductor wafer) or a heading wafer identification (ID) (ID is given uniquely to each semiconductor wafer).
That is, in the conventional methods, the preceding wafer or the measuring wafer is determined without consideration of a variation in processing results among inner-lot wafers. This causes problems as described below.
(Problem of Conventional Method for Determining Preceding Wafer)
A semiconductor wafer determined as a preceding wafer may be a wafer having processing results largely deviated from the average of the processing results of a process performed for wafers in the same lot prior to a given process for which preceding processing is intended. In such a case, if the conditions of the given process are adjusted based on the processing results of the given process on the preceding wafer and the given process is performed for the inner-lot wafers other than the preceding wafer under the adjusted conditions, the processing results of the given process may fail to be within specifications for a majority of the inner-lot wafers.
The above problem of the conventional preceding wafer determination method will be described with reference to FIGS.
9
(
a
) and
9
(
b
), taking the case of performing preceding processing for an etching process as an example. The etching in this case is made for a film deposited on each of five semiconductor wafers constituting one lot. In FIGS.
9
(
a
) and
9
(
b
), the respective semiconductor wafers as substrates are omitted for simplification.
FIG.
9
(
a
) illustrates the results of the process of depositing films on semiconductor wafers Nos.
1
to
5
(film deposition process). As shown in FIG.
9
(
a
), among the thicknesses of the deposited films (deposited film thicknesses) of semiconductor wafers Nos.
1
to
5
, denoted by d
1
, d
2
, d
3
, d
4
, and d
5
, respectively, the deposited film thickness d
1
of semiconductor wafer No.
1
is smallest.
FIG.
9
(
b
) illustrates the results of the etching process performed for semiconductor wafers Nos.
1
to
5
after the film deposition process based on preceding processing performed for semiconductor wafer No.
1
as a preceding wafer. More specifically, semiconductor wafer No.
1
is preliminarily etched so that the film thickness remaining after the etching (post-etching film thickness) is equal to a predetermined target value (target film thickness), to determine the etching time required for the etching process. Thereafter, remaining semiconductor wafers Nos.
2
to
5
are etched for the determined etching time. At this time, it is presumed that the etching amounts, that is, the etching depths of the films on semiconductor wafers Nos.
1
to
5
are roughly the same.
As shown in FIG.
9
(
b
), the post-etching film thicknesses of semiconductor wafers Nos.
2
to
5
are larger than the target film thickness by e
2
, e
3
, e
4
, and e
5
, respectively. In particular, the post-etching film thicknesses of semiconductor wafers Nos.
2
,
4
, and
5
exceed the upper limit. In FIG.
9
(
b
), the respective areas defined by the dotted lines represent the portions of the films deposited at the film deposition process shown in FIG.
9
(
a
) but removed at the etching process.
(First Problem of Conventional Method for Determining Measuring Wafer)
In measurement of the processing results of a given process on inner-lot wafers using a measuring wafer, the semiconductor wafer determined as the measuring wafer may be a wafer having the processing results largely deviated from the average of the processing results of a process performed for wafers in the same lot prior to the given process. In such a case, the average processing results of the given process on the inner-lot wafers will not be obtained by measuring the processing results of the given process on the measuring wafer.
The above first problem of the conventional measuring wafer determining method will be described with reference to FIGS.
10
(
a
) and
10
(
b
), taking as an example the case of measuring the film thickness remaining after etching (post-etching film thickness) of a film; deposited on each of five semiconductor wafers Nos.
1
to
5
constituting one lot. In FIGS.
10
(
a
) and
10
(
b
), the respective semiconductor wafers as substrates are omitted for simplification.
FIG.
10
(
a
) illustrates the results of the process of depositing films on semiconductor wafers Nos.
1
to
5
(film deposition process). As shown in FIG.
10
(
a
), among the deposited film thicknesses of semiconductor wafers Nos.
1
to
5
, denoted by s
1
, s
2
, s
3
, s
4
, and s
5
, respectively, the deposited film thickness s
1
of semiconductor wafer No.
1
is most largely deviated from a predetermined target value (target deposited film thickness).
FIG.
10
(
b
) illustrates the results of the etching process performed for semiconductor wafers Nos.
1
to
5
after the film deposition process. Assume that the etching process has been performed for semiconductor wafers Nos.
1
to
5
for the same etching time calculated based on the difference between the target deposited film thickness in the film deposition process and the target film, thickness in the etching process. At this time, it is presumed that the etching amounts, that is, the etching depths of the films on semiconductor wafers Nos.
1
to
5
are roughly the same. In this case, as shown in FIG.
10
(
b
), the post-etching film thickness t
1
of semiconductor wafer No.
1
is most largely deviated from the average of the post-etching thicknesses t
1
, t
2
, t
3
, t
4
, and t
5
of semiconductor wafers Nos.
1
to
5
. Therefore, by measuring the post-etching film thickness of semiconductor wafer No.
1
, having the least wafer number, as a measuring wafer, the average post-etching film thickness of semiconductor wafers Nos.
1
to
5
will not be obtained.
(Second Problem of Conventional Method for Determining Measuring Wafer)
Another problem arises when the processing results of a given process on inner-lot wafers are measured using a measuring w
Ishizuka Hiroaki
Matsumoto Shigeru
Matsushita Electric - Industrial Co., Ltd.
Nixon & Peabody LLP
Pert Evan
Studebaker Donald R.
LandOfFree
Method for determining a preceding wafer group does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for determining a preceding wafer group, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining a preceding wafer group will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3016428