Scanning-probe techniques or apparatus; applications of scanning – Particular type of scanning probe microscopy or microscope;... – Scanning capacitance microscopy or apparatus therefor – e.g.,...
Reexamination Certificate
2007-02-28
2010-11-23
Berman, Jack I (Department: 2881)
Scanning-probe techniques or apparatus; applications of scanning
Particular type of scanning probe microscopy or microscope;...
Scanning capacitance microscopy or apparatus therefor, e.g.,...
C850S033000, C850S039000
Reexamination Certificate
active
07841015
ABSTRACT:
A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.
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Arnold Walter
Rabe Ute
Schwarz Kerstin
Antonelli, Terry Stout & Kraus, LLP.
Berman Jack I
Fraunhofer-Gesellschaft zur Förderung der Angewandten Forsc
Maskell Michael
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