Method for detection of chemicals by reversible quenching of sil

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

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2041293, 20412975, 156626, 156662, 356318, C25F 312, H01L 21306, B44C 122, G01J 330

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053384156

ABSTRACT:
An n-type silicon (Si) wafer is galvanostatically etched in a hydrofluoric acid (HF)-containing solution while being illuminated with a 300 watt tungsten light source to form porous silicon with luminescent properties. Photoluminescence of the porous silicon is monitored using a short wavelength visible or ultraviolet light source and a monochromator/CCD detector assembly. Upon exposure to organic solvents, the photoluminescence is quenched. Within seconds of removal of the solvent, the original intensity is recovered and further exposure of the porous silicon to organic solvents will again result in quenching of the luminescence.

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Porous Silicon Formation: A Quantum Wire Effect; V. Lehmann, et al; Appl. Phys. Lett. 58 (8); Feb. 25, 1991; pp. 856-858.

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