Method for detection and analysis of impurity content in...

Details Method for detection and analysis of impurity content in... Method for detection and analysis of impurity content in...

2008-10-03

2010-02-16

Dole, Timothy J (Department: 2831)

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

C324S717000, C324S765010, C423S348000

Reexamination Certificate

active

07663383

ABSTRACT:
A method for detection and analysis of impurity content of refined metallurgical silicon includes: (1) select the measuring points on the crystal rods or crystal ingots along the crystallization direction, measuring the resistivity at each measuring point and acquire the measured value of resistivity according to the distribution of crystallized fraction; (2) get the estimated value of the content of boron and phosphorus at each measuring point and calculate the estimated net redundant carrier concentration and the measured value of resistivity; (3) compare the estimated value of net redundant carrier concentration with that of the measured value, and adjust the estimated value of impurity content in the silicon material to get the new estimated net redundant carrier concentration, and use regression analysis to determine the impurity content distribution of boron and phosphorus; (4) get the average impurity content of boron and phosphorus in the silicon material according to the distribution status of impurity based on all the measuring points. This invention can detect the impurity contents of boron and phosphorus in refined metallurgical silicon, while the operation is simple, low-cost and suitable for industrial applications.

REFERENCES:
patent: 3628137 (1971-12-01), Mazur
patent: 5298860 (1994-03-01), Kato
patent: 5585734 (1996-12-01), Meuris et al.
patent: 6201401 (2001-03-01), Hellemans et al.
patent: 6313648 (2001-11-01), Syo

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