Method for detecting wafer defects

Details Method for detecting wafer defects Method for detecting wafer defects

1995-07-13

1997-05-27

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

430 22, 430 30, H01L 2166

Patent

active

056331738

ABSTRACT:
A method for detecting wafer defects, comprising the steps of: forming dummy dies useful as an alignment mark at edge portions of a flat wafer, the edge portions having no pattern die; loading the wafer in a defect detecting apparatus; arranging the edge portions of the dummy dies; inspecting the wafer for defects to give data for the defects; and carrying out subsequent processes, according to which the detected defects are utilized to inspect for process defects at subsequent process steps, which makes it easy to monitor organic relations between the wafer defects and the process defects and between the process defects themselves.

REFERENCES:
patent: 4134066 (1979-01-01), Vogel et al.
patent: 5478762 (1995-12-01), Chao
J. Ryuta, et al., Jpn. J. Appl. Phys., 31, 3B(1992) L293, "Effect of . . . Crystal-Originated Particles on Si Wafers".

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