Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-08-27
1999-09-07
Hitashew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117201, 117202, C30B 1526
Patent
active
059481609
ABSTRACT:
The invention relates to a method for detecting torsional oscillations among abnormal oscillations occurring during the course of pulling of a single crystal, and also to a method for manufacturing a silicon single crystal using this method. Torsional oscillations are detected by detecting seam portions of a silicon single crystal being rotated with a camera device, memorizing time intervals of the signals outputted by detection of the seam portions, calculating an average value of the time intervals, comparing a time interval of freshly outputted signals with the average value, and deciding occurrence of torsional oscillations in the single crystal when the resulting deviation exceeds a predetermined value. When this method is adopted for pulling of a silicon single crystal, the single crystal is prevented from generating a dislocation and from dropping owing to the breakage at a neck portion thereof. Thus, the silicon single crystal can be manufactured with an improved yield and with a high efficiency.
REFERENCES:
patent: 4969745 (1990-11-01), Ibe
patent: 5156822 (1992-10-01), Whipple, III
patent: 5170061 (1992-12-01), Baba
patent: 5665159 (1997-09-01), Fuerhott
"A system for collection and on line integration of x-ray diffraction data from a multiwire area detector", Bluu., et al; Journal of Applied Crystallograph; vol. 20 pp. 235-241 (Jun. 1, 1987).
"One year experience with a high resolution ring detector position camera system: present status and future plans", 1980.
Hitashew Felisa
Sumitomo Sitix Corporation
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