Method for detecting the end point of a plasma etching reaction

Details Method for detecting the end point of a plasma etching reaction Method for detecting the end point of a plasma etching reaction

1979-11-02

1982-07-20

Gantz, Delbert E.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156627, 156643, 156646, 204298, 324 65R, 422906, H01L 21306

Patent

active

043404561

ABSTRACT:
A method for removing photoresist from a substrate. A substrate to be stripped of photoresist is placed in a metal substrate holder or boat which is subsequently loaded into a plasma reactor. The holder is placed in contact with one electrode of the plasma reactor. The plasma reactor is evacuated and a hydrogen bearing gas is injected into the reactor at a rate to maintain the pressure between 0.1 and 10 Torr. The photoresist coated substrate is heated to a temperature between 100.degree. C. and 225.degree. C. Power is applied to the plasma reactor to create a hydrogen plasma which reacts with and removes the photoresist. During the removal operation the reflected power from the reactor is monitored to detect the end point of the plasma-photoresist reaction.

REFERENCES:
patent: 4085022 (1978-04-01), Wechsung et al.
patent: 4207137 (1980-06-01), Tretola
K. Ukai et al., End-Point Determination of Aluminum Reactive Ion Etching by Discharge Impedance Monitoring, J. Vac. Sci. Technol., vol. 16, No. 2, Mar./Apr. 1979, pp. 385-387.
N. M. Mazza, "Automatic Impedance Matching System for R F Sputtering", IBM J. Res. Develop., vol. 14, No. 2 (Mar. 1970).
P. T. Rahaim, "Automatic Tuning Controller for Anode Tuned Sputtering System", IBM Tech. Disc. Bulletin, vol. 19, No. 11 (Apr. 1977) pp. 4087-4088.

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