Method for detecting silicide encroachment of a gate...

Details Method for detecting silicide encroachment of a gate... Method for detecting silicide encroachment of a gate...

2005-10-18

2005-10-18

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S682000, C438S683000

Reexamination Certificate

active

06955931

ABSTRACT:
A method of detecting silicide encroachment to the sidewalls of a gate electrode includes forming silicide at a device, with sidewall spacers defining a desired separation of the silicide from the sidewalls of the gate electrode. After silicide formation, the sidewall spacers are removed and line-of-sight monitoring is performed of the region previously obscured by the sidewall spacers, thereby permitting detection of silicide encroachment.

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