Method for detecting semiconductor manufacturing conditions

Details Method for detecting semiconductor manufacturing conditions Method for detecting semiconductor manufacturing conditions

2006-03-17

2009-06-30

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

With measuring or testing

C438S005000, C438S007000, C438S016000, C257SE21522, C430S005000, C430S030000, C382S144000, C382S145000, C382S147000

Reexamination Certificate

active

07553678

ABSTRACT:
A method for detecting semiconductor-manufacturing conditions includes providing a photomask with a plurality of pattern areas each having a plurality of test lines with different pitches, exposing a plurality of wafer with the photomask in different manufacturing conditions, measuring the critical dimensions of the plurality of pattern areas, generating a library of relationships between the pitches and the critical dimension of the pattern areas, exposing a test wafer in an unknown manufacturing condition, finding out a relationships between the pitches and the critical dimension of the pattern areas of the test wafer, searching for a most similar relationship in the library, and detecting a set of manufacturing parameters used to expose the test wafer.

REFERENCES:
patent: 6563564 (2003-05-01), de Mol et al.
patent: 7008731 (2006-03-01), Nojima et al.
patent: 7427457 (2008-09-01), Plat et al.
patent: 2002/0102468 (2002-08-01), Tzu et al.
patent: 2005/0037272 (2005-02-01), Tanaka
patent: 500987 (2002-09-01), None
patent: 571176 (2004-01-01), None
patent: 200401172 (2004-01-01), None

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