Method for detecting polishing end in CMP polishing device,...

Details Method for detecting polishing end in CMP polishing device,... Method for detecting polishing end in CMP polishing device,...

2011-07-19

2011-07-19

Norton, Nadine G (Department: 1713)

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

C451S005000

Reexamination Certificate

active

07981309

ABSTRACT:
The spectral reflectance spectrum of an object of polishing that has reached the polishing endpoint is found ahead of time, the spectral reflectance spectrum of the object of polishing is found during polishing, and the correlation coefficient of these is seen as parameter 1. Meanwhile, the sum of the absolute values of the difference between the first order differentials of these is seen as parameter 2. Then, when parameter 1 is in a range exceeding a specific value, and parameter 2 is at its minimum, it is concluded that the polishing endpoint has been reached. Thus, it is possible to provide a method for detecting the polishing endpoint in a highly reliable CMP polishing apparatus.

REFERENCES:
patent: 6932671 (2005-08-01), Korovin et al.
patent: 2002/0155788 (2002-10-01), Bibby et al.
patent: 2004/0030060 (2004-02-01), Sunkara et al.
patent: 2006/0030060 (2006-02-01), Noguchi et al.
patent: 2000-040680 (2000-02-01), None
patent: 2001-287159 (2001-10-01), None

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