Method for detecting epitaxial (EPI) induced buried layer...

Details Method for detecting epitaxial (EPI) induced buried layer... Method for detecting epitaxial (EPI) induced buried layer...

2006-09-26

2006-09-26

Tang, Minh N. (Department: 2829)

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

C324S763010

Reexamination Certificate

active

07112953

ABSTRACT:
The present invention provides a method for monitoring a shift in a buried layer in a semiconductor device. The method for monitoring the shift in the buried layer, among other steps, includes forming a buried layer test structure in, on or over a substrate of a semiconductor device, the buried layer test structure including a first test buried layer located in or on the substrate, the first test buried layer shifted a predetermined distance with respect to a first test feature. The buried layer test structure further includes a second test buried layer lodated in the substrate, the second test buried layer shifted a predetermined but different distance with respect to a second test feature. The method for monitoring the shift in the buried layer may further include applying a test signal to the buried layer test structure to determine an actual shift relative to the predetermined shift.

REFERENCES:
patent: 5241361 (1993-08-01), Miki

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